Toshiba 2SA1832-GR,LF BJTs - Bipolar Transistors Transistor for Low Freq Sm-Signal Amp

Technology: Si

Unit Weight: 2.400 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 100 mW

DC Current Gain hFE Max: 400 at - 2 mA, - 6 V

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 125 C

DC Collector/Base Gain hfe Min: 70 at - 2 mA, - 6 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 100 mV