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Toshiba 2SA1588-Y,LF BJTs - Bipolar Transistors Transistor for Low Freq. Amplification

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Technology: Si

Unit Weight: 6 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 100 mW

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 35 V

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 125 C

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 250 mV

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