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Toshiba 2SA1362-GR,LF BJTs - Bipolar Transistors TRANS-SS PNP SOT23 15V

Model2SA1362-GR,LF
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Technology: Si

Unit Weight: 12 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 400

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 15 V

Maximum DC Collector Current: 800 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 200 mV

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