Toshiba 2SA1298-Y,LF BJTs - Bipolar Transistors Bias Resistor Built-in transistor
ManufacturerToshiba(View more products from this manufacturer)
Model2SA1298-Y,LF
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Technology: Si
Unit Weight: 12 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 320
Gain Bandwidth Product fT: 120 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 30 V
Continuous Collector Current: - 800 mA
Maximum DC Collector Current: 800 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 25 V
Collector-Emitter Saturation Voltage: 400 mV
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