Toshiba 2SA1182-Y,LF BJTs - Bipolar Transistors Bias Resistor Built-in transistor
ManufacturerToshiba(View more products from this manufacturer)
Model2SA1182-Y,LF
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Technology: Si
Unit Weight: 12 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 150 mW
DC Current Gain hFE Max: 400
Gain Bandwidth Product fT: 200 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 35 V
Continuous Collector Current: - 500 mA
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 125 C
DC Collector/Base Gain hfe Min: 25
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 100 mV
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