Toshiba 2SA1162-Y,LXHF BJTs - Bipolar Transistors AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-346 (S-Mini)

Technology: Si

Configuration: Single

Qualification: AEC-Q200

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 400 at - 2 mA, - 6 V

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 150 mA

Maximum Operating Temperature: + 125 C

DC Collector/Base Gain hfe Min: 70 at - 2 mA, - 6 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 100 mV