Toshiba 1SS403,H3F Silicon Epitaxial Planar Type IFM=300mA Automotive; AEC-Q
ManufacturerToshiba(View more products from this manufacturer)
Model1SS403,H3F
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Width: 1.25 mm
Height: 0.9 mm
Length: 1.7 mm
Unit Weight: 33 mg
Configuration: Single
Qualification: AEC-Q101
Recovery Time: 10 ns
Mounting Style: SMD/SMT
Max Surge Current: 2 A
If - Forward Current: 100 mA
Ir - Reverse Current: 1 uA
Peak Reverse Voltage: 250 V
Vf - Forward Voltage: 900 mV
Vr - Reverse Voltage: 200 V
Pd - Power Dissipation: 200 mW
Maximum Diode Capacitance: 3 pF
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
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