Texas Instruments CSD23280F3T MOSFET
ModelCSD23280F3T
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Vgs(th): 0.95 V
Vgs (Max): -6V
Gate Charge (Qg): 1.23nC
Power consumption: 500mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 12V
Continuous drain current: 1.8A
Input Capacitance (Ciss): 234pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 116mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.5|4.5V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts