Texas Instruments CSD23280F3 MOSFETs -12-V P channel Nex FET power MOSFET s A 595-CSD23280F3T

Width: 0.64 mm

Height: 0.35 mm

Length: 0.73 mm

Fall Time: 8 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 0.300 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 950 pC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 21 ns

Id - Continuous Drain Current: 1.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3 S

Rds On - Drain-Source Resistance: 250 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 950 mV