Texas Instruments CSD23203WT MOSFETs CSD23203W 8V P-Ch Ne xFET Power MOSFET A 595-CSD23203W

Width: 1 mm

Height: 0.625 mm

Length: 1.5 mm

Fall Time: 27 ns

Rise Time: 12 ns

Technology: Si

Unit Weight: 1.700 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 4.9 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 750 mW

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 58 ns

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 53 mOhms

Vds - Drain-Source Breakdown Voltage: 8 V

Vgs th - Gate-Source Threshold Voltage: 800 mV