Taiwan Semiconductor BC847B RF BJTs - Bipolar Transistors 50V, 0.1A, NPN Bipolar Transistor

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 450 at 2 mA, 5 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 500 mV