STMicroelectronics VNP20N07-E Power MOSFET N-Ch 70V 20A OmniFET

Fall Time: 150 ns

Rise Time: 240 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 60 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 83 W

Typical Turn-On Delay Time: 90 ns

Typical Turn-Off Delay Time: 430 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 17 S

Rds On - Drain-Source Resistance: 50 mOhms

Vds - Drain-Source Breakdown Voltage: 70 V

Vgs th - Gate-Source Threshold Voltage: 3 V