STMicroelectronics TIP35CP BJTs - Bipolar Transistors Complementary power transistors

Width: 5 mm

Height: 18.7 mm

Length: 15.8 mm

Technology: Si

Unit Weight: 6.756 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 125 W

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 25 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 1.8 V