STMicroelectronics TIP29C BJTs - Bipolar Transistors NPN Gen Pur Power

Width: 4.6 mm

Height: 9.15 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 30 W

DC Current Gain hFE Max: 75

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 15

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 700 mV