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STMicroelectronics STW68N60M6-4 MOSFETs N-channel 600 V, 35 mOhm typ 63 A MDmesh M6 Power MOSFET

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Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Id - Continuous Drain Current: 63 A

Rds On - Drain-Source Resistance: 41 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

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