STMicroelectronics STT818B BJTs - Bipolar Transistors PNP Lo-Volt Hi-Gain
ModelSTT818B
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Width: 1.75 mm
Height: 1.3 mm
Length: 3.05 mm
Technology: Si
Unit Weight: 6.500 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 1.2 W
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 30 V
Continuous Collector Current: - 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 210 mV
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