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STMicroelectronics STPSC12H065CT Schottky Silicon Carbide Diodes 650V Pwr Schottky Silicn Carbide Diode

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Technology: SiC

Unit Weight: 6 g

Configuration: Dual

Mounting Style: Through Hole

If - Forward Current: 12 A

Ir - Reverse Current: 250 uA

Vf - Forward Voltage: 1.56 V

Ifsm - Forward Surge Current: 400 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Vrrm - Repetitive Reverse Voltage: 650 V

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