STMicroelectronics STP4NB50 Power MOSFET
ModelSTP4NB50
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Type: Power MOSFET
Vgs(th): 4 V
Vgs (Max): 30V
Gate Charge (Qg): 21nC
Power consumption: 80W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 500V
Continuous drain current: 3.8A
Input Capacitance (Ciss): 400pF
Operating temperature range: 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 2.8Ohm
Drive Voltage (Max Rds On, Min Rds On): 10V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts