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STMicroelectronics STN9360 BJTs - Bipolar Transistors Hi Vltg fast-switch PNP pwr transistor

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Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.6 W

DC Current Gain hFE Max: 200

Emitter- Base Voltage VEBO: 7 V

Continuous Collector Current: - 0.5 V

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 500 mV

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