STMicroelectronics STN2580 BJTs - Bipolar Transistors High Voltage NPN PWR Trans 800V 1A
ModelSTN2580
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Technology: Si
Unit Weight: 112 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 1.6 W
Emitter- Base Voltage VEBO: 9 V
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 60
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 1 V
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