STMicroelectronics STLD200N4F6AG MOSFETs Automotive-grade N-channel 40 V, 1.27 mOhm typ 120 A STripFET F6 Power MOSFET

Fall Time: 410 ns

Rise Time: 440 ns

Technology: Si

Unit Weight: 76 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 172 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 158 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 150 ns

Typical Turn-Off Delay Time: 600 ns

Id - Continuous Drain Current: 120 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.27 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2 V