STMicroelectronics STGW20V60DF IGBT Transistors 600V 20A High Speed Trench Gate IGBT
ModelSTGW20V60DF
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Technology: Si
Unit Weight: 6.500 g
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 167 W
Gate-Emitter Leakage Current: 250 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.3 V
Continuous Collector Current at 25 C: 40 A
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