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STMicroelectronics STGIPQ3H60T-HZ SiC IGBT Modules SLLIMM nano 2nd series IPM, 3 A, 600 V, 3-phase IGBT inverter bridge

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Technology: SiC

Unit Weight: 4 mg

Configuration: Half Bridge

Mounting Style: Through Hole

Maximum Operating Temperature: + 175 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.15 V

Continuous Collector Current at 25 C: 3 A

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