STMicroelectronics STGIPN3HD60-H IGBT Modules PTD IGBT & IPM
ModelSTGIPN3HD60-H
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Technology: Si
Unit Weight: 4.595 g
Configuration: 3-Phase Inverter
Mounting Style: Through Hole
Pd - Power Dissipation: 9.7 W
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.15 V
Continuous Collector Current at 25 C: 3 A
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