STMicroelectronics STD888T4 BJTs - Bipolar Transistors Medium current, high performance, low volt PNP transistor
ModelSTD888T4
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Width: 6.2 mm
Height: 2.4 mm
Length: 6.6 mm
Technology: Si
Unit Weight: 4 g
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 15 W
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 45 V
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 150
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 700 mV
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