STMicroelectronics STD127DT4 BJTs - Bipolar Transistors High VTG fast switch NPN pwr transistor
ModelSTD127DT4
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Technology: Si
Unit Weight: 350 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 35 W
DC Current Gain hFE Max: 40
Emitter- Base Voltage VEBO: 9 V
Continuous Collector Current: 4 A
Maximum DC Collector Current: 4 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 5
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 1.3 V
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