STMicroelectronics STAC3932B RF Power MOSFET POWER R.F.

Gain: 24.6 dB

Width: 9.78 mm

Height: 5.33 mm

Length: 34.04 mm

Technology: Si

Unit Weight: 2.100 g

Channel Mode: Enhancement

Output Power: 580 W

Configuration: Dual Common Source

Mounting Style: SMD/SMT

Operating Frequency: 250 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 625 W

Vgs - Gate-Source Voltage: + 20 V

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Forward Transconductance - Min: 3 S to 5 S

Vds - Drain-Source Breakdown Voltage: 250 V