STMicroelectronics ST9060C RF Power MOSFET RF Power LDMOS transistor HF up to 1.5 GHz

Gain: 17.3 dB

Technology: Si

Output Power: 80 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 1 Channel

Operating Frequency: 1.5 GHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 170 W

Vgs - Gate-Source Voltage: + 2.9 V

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 200 C

Vds - Drain-Source Breakdown Voltage: 90 V