STMicroelectronics ST50V10100 RF Power MOSFET RF Power LDMOS transistor for frequencies up to 1.5 GHz

Gain: 18 dB

Technology: Si

Output Power: 100 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 1 Channel

Operating Frequency: 1 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Id - Continuous Drain Current: 18 A

Maximum Operating Temperature: + 200 C

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 3 V