STMicroelectronics ST16010 RF Power MOSFET 10 W, 28 V, HF to 1.6 GHz RF Power LDMOS transistor

Gain: 21 dB

Technology: Si

Output Power: 12 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Operating Frequency: 930 MHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Maximum Operating Temperature: + 200 C

Forward Transconductance - Min: 1 S

Vds - Drain-Source Breakdown Voltage: 90 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V