STMicroelectronics SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 pa
ModelSCTWA35N65G2V4AG
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Channel Type: N Channel
Power Dissipation: 240
Transistor Case Style: HiP247
Drain Source Voltage Vds: 650
Operating Temperature Max: 200 °C
Continuous Drain Current Id: 45
Mosfet Module Configuration: Single
Drain Source On State Resistance: 67
Gate Source Threshold Voltage Max: 5
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