STMicroelectronics SCTWA20N120 PTD WBG & POWER RF
ModelSCTWA20N120
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Channel Type: N Channel
Power Dissipation: 175
Transistor Case Style: HiP247
Drain Source Voltage Vds: 1.2
Operating Temperature Max: 200 °C
Continuous Drain Current Id: 20
Mosfet Module Configuration: Single
Drain Source On State Resistance: 239
Gate Source Threshold Voltage Max: 3.5
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