STMicroelectronics SCTH35N65G2V-7AG Silicon Carbide MOSFET, Single, N Channel, 45 A, 650 V, 0.045 ohm, H2PAK
ModelSCTH35N65G2V-7AG
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Channel Type: N Channel
Power Dissipation: 208
Transistor Case Style: H2PAK
Drain Source Voltage Vds: 650
Operating Temperature Max: 175 °C
Continuous Drain Current Id: 45
Mosfet Module Configuration: Single
Drain Source On State Resistance: 67
Gate Source Threshold Voltage Max: 5
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