STMicroelectronics SCT10N120 Silicon Carbide MOSFET, Single, N Channel, 12 A, 1.2 kV, 0.5 ohm, HiP247
ModelSCT10N120
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
No. of Pins: 3
Channel Type: N Channel
Power Dissipation: 150
Transistor Case Style: HiP247
Drain Source Voltage Vds: 1.2
Operating Temperature Max: 200 °C
Continuous Drain Current Id: 12
Mosfet Module Configuration: Single
Drain Source On State Resistance: 690
Gate Source Threshold Voltage Max: 3.5
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts