STMicroelectronics RF3L05400CB4 RF Power MOSFET 400 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
ModelRF3L05400CB4
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Gain: 17 dB
Technology: Si
Output Power: 380 W
Mounting Style: Through Hole
Transistor Type: LDMOS FET
Number of Channels: 1 Channel
Operating Frequency: 500 MHz
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 28 V
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