STMicroelectronics RF3L05250CB4 RF Power MOSFET 250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz

Gain: 18 dB

Technology: Si

Unit Weight: 2.400 g

Output Power: 250 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 1 Channel

Operating Frequency: 1 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 200 C

Rds On - Drain-Source Resistance: 1 Ohms

Vds - Drain-Source Breakdown Voltage: 90 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V