STMicroelectronics RF2L16180CB4 RF Power MOSFET 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor

Gain: 14 dB

Technology: Si

Unit Weight: 4 g

Output Power: 180 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 1 Channel

Operating Frequency: 1.6 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 200 C

Rds On - Drain-Source Resistance: 1 Ohms

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V