STMicroelectronics BYW51G-200-TR Switching Diode
ModelBYW51G-200-TR
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Speed: Fast Recovery =< 500ns > 200mA(Io)
Diode type: Standard
Mounting Type: Surface Mount
Diode Configuration: 1Pair Common Cathode
Reverse recovery time: 35ns
Average rectified current: 20A
Operating temperature range: 150 C (Max)
Spannung – DC Reverse Vr Max: 200V
Repetitive peak reverse voltage: 200V
Spannung – Vorwärts (Vf) Max: 850mV@8A
最大非繰り返しサージ電流: 100A
Current - Average Rectified Io per Diode: 10A
Current - Reverse Leakage with Vr Applied: 15uA@200V
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