STMicroelectronics BUL742C BJTs - Bipolar Transistors NPN Hi-Volt Fast Sw
ModelBUL742C
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Width: 4.6 mm
Height: 9.15 mm
Length: 10.4 mm
Technology: Si
Unit Weight: 6 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 70 W
DC Current Gain hFE Max: 100
Emitter- Base Voltage VEBO: 12 V
Continuous Collector Current: 4 A
Maximum DC Collector Current: 4 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 48
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 600 mV
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