STMicroelectronics BUL216 BJTs - Bipolar Transistors NPN Hi-Volt Fast Sw
ModelBUL216
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Width: 4.6 mm
Height: 9.15 mm
Length: 10.4 mm
Technology: Si
Unit Weight: 6 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 90 W
Emitter- Base Voltage VEBO: 9 V
Continuous Collector Current: 4 A
Maximum DC Collector Current: 4 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 800 V
Collector-Emitter Saturation Voltage: 1 V
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