STMicroelectronics BUL1102E BJTs - Bipolar Transistors High volt fast-switching NPN power transistor

Width: 4.6 mm

Height: 15.75 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 70 W

Emitter- Base Voltage VEBO: 12 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 35 at 250 mA, 5 V, 12 at 2 A, 5 V

Collector- Emitter Voltage VCEO Max: 450 V

Collector-Emitter Saturation Voltage: 1.5 V