STMicroelectronics BU508AF BJTs - Bipolar Transistors NPN Power Transistor
ModelBU508AF
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Width: 15.7 mm
Height: 14.7 mm
Length: 26.7 mm
Technology: Si
Unit Weight: 5.200 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 50 W
Emitter- Base Voltage VEBO: 9 V
Continuous Collector Current: 8 A
Maximum DC Collector Current: 8 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 700 V
Collector-Emitter Saturation Voltage: 1 V
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