STMicroelectronics 2STR2230 BJTs - Bipolar Transistors LOW VOLT TRAN

Width: 1.3 mm

Height: 0.95 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 560

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 420 mV