STMicroelectronics 2STR2160 BJTs - Bipolar Transistors LOW VOLTAGE FAST SWITCHING PNP POWER

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 560

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: - 1 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 45

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 260 mV