STMicroelectronics 2STN1550 BJTs - Bipolar Transistors IGBT & Power Bipolar
Model2STN1550
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Width: 3.5 mm
Height: 1.8 mm
Length: 6.5 mm
Technology: Si
Unit Weight: 112 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 1.6 W
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 260 mV
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