Shindengen P8F28HP2-5600 MOSFETs 280V, 8A EETMOS POWER MOSFET

Fall Time: 24 ns

Rise Time: 30 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 9.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 52.5 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 36 ns

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 2.9 S

Rds On - Drain-Source Resistance: 380 mOhms

Vds - Drain-Source Breakdown Voltage: 280 V

Vgs th - Gate-Source Threshold Voltage: 3.75 V