SemiQ GCMS020B120S1-E1 Silicon Carbide (SiC) Module SiC 1200V 20mohm MOSFET & 50A SBD SOT-227

Fall Time: 25 ns

Rise Time: 8 ns

Technology: SiC

Configuration: Single

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Vf - Forward Voltage: 1.49 V

Pd - Power Dissipation: 395 W

Vgs - Gate-Source Voltage: - 5 V, + 10 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 46 ns

Id - Continuous Drain Current: 113 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 28 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4 V