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Sanken FKV550N Sanken_category_Transistor,MOSFET,IGBT,Array

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Type: Power MOSFET

Vgs(th): 4.2 V

Vgs (Max): 20V

Power consumption: 35W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 50V

Continuous drain current: 50A

Input Capacitance (Ciss): 2000pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 15mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

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