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Sanken FKI06190 Sanken_category_Transistor,MOSFET,IGBT,Array

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Type: Power MOSFET

Vgs(th): 2.5 V

Vgs (Max): 20V

Gate Charge (Qg): 23.7nC

Power consumption: 32W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 60V

Continuous drain current: 30A

Input Capacitance (Ciss): 1510pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 15.3mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet


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