ROHM Semiconductor YQ20BGE10SDTL Schottky Diodes Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe

Name: ROHM Semiconductor YQ20BGE10SDTL Schottky Diodes Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Brand: ROHM Semiconductor

ManufacturerROHM Semiconductor(View more products from this manufacturer)

ModelYQ20BGE10SDTL

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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

If - Forward Current: 20 A

Ir - Reverse Current: 80 uA

Vf - Forward Voltage: 790 mV

Vr - Reverse Voltage: 100 V

Ifsm - Forward Surge Current: 150 A

Maximum Operating Temperature: + 150 C

Vrrm - Repetitive Reverse Voltage: 100 V

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